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DigiTimes
Samsung to use 2nm process for HBM5 base die as heat challenge grows
Samsung Electronics plans to produce the base die for its upcoming HBM5 memory using a 2nm gate-all-around process. This move is in response to increasing demands for higher performance and efficiency in high-bandwidth memory, which is critical for advanced computing tasks. The adoption of this smaller fabrication process highlights the growing importance of addressing heat management challenges in increasingly powerful memory technologies.
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Published 27 Jul 2026, 10:20 UTC1 min read
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Summary
TL;DR
- Samsung will use a 2nm process for HBM5 memory fabrication
- The new process aims to enhance performance and power efficiency
- Heat management remains a critical challenge for high-performance memory
- The shift to smaller process technology signifies industry trends
- Higher demand for high-bandwidth memory fuels these developments
Interesting facts
- The shift to a 2nm process could set new standards in memory technology
- Strong focus on heat management showcases industry's intricate balance between performance and reliability