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SK Hynix Races Samsung to 400+ Layer NAND, but Must Abandon Tungsten Entirely as Stacking Hits a Material Wall
SK Hynix is progressing towards the mass production of its 375-layer NAND Flash, anticipated by late 2026, as it competes against Samsung's ambition for even higher-layer counts. Internal decisions have revised initial projections of a 400-layer capability down to 375, primarily due to difficulties in stacking layers using tungsten technology. To overcome resistance issues, Hynix plans to integrate molybdenum, a strategy already adopted by Samsung. The increasing demand for storage hints at a booming market for NAND producers, though they face rising material costs as they ramp up production.
MonitorConfidence: MediumMid term horizon
Published 11 Jun 2026, 20:21 UTC3 min read
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Summary
TL;DR
- SK Hynix aims for mass production of 375-layer NAND by 2026.
- Samsung is targeting over 400 layers with improved stacking methods.
- Hynix switches from tungsten to molybdenum to resolve manufacturing issues.
- Projected demand for molybdenum in NAND production is set to soar.
- The NAND market is forecasted for significant revenue growth.
Interesting facts
- Hynix's internal labeling of the 375-layer NAND as '400-layer' indicates ambitious goals.
- The shift to molybdenum is a significant materials science adaptation in NAND production.