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Samsung Borrows NAND Trick To Crack Next-Gen DRAM, While SK hynix Bets on Vertical Stacking To Win the AI Memory War
In response to the increased demand for memory chips driven by AI data center expansions, Samsung and SK hynix are adopting distinct strategies for next-generation DRAM manufacturing. Samsung is considering GAAFET technology to improve the performance of its DRAM chips, intrigued by its enhanced transistor capabilities. Conversely, SK hynix is advancing its 4F² vertical stacking approach to optimize space and performance. Both companies are in a race to establish their preferred technique as the industry standard.
MonitorConfidence: HighShort term horizon
Published 7 May 2026, 22:20 UTC3 min read
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Summary
TL;DR
- Samsung explores GAAFET technology for next-gen DRAM.
- SK hynix innovates with a vertical stacking method.
- Rising demand for memory chips is driven by AI applications.
- Both companies aim to dominate the DRAM market.
- New manufacturing approaches address data storage challenges.
Interesting facts
- GAAFET technology has the potential to enhance memory chip performance.
- The memory market is experiencing tight supply due to increased demand.
- 3D DRAM is becoming crucial for accommodating greater data density.